s m d s u p e r f a s t r e c o v e r y r e c t i f i e r s reverse v oltage: 50 to 600 v olts forward current: 1.0 amp rohs device page 1 rev :a features -ideal for surface mount applications. -easy pick and place. -plastic package has underwriters lab. flammability classification 94v -0. -super fast recovery time 35ns. -built-in strain relief. -low forward voltage drop. mechanical data -case: jedec do-214ac, molded plastic. -t erminals: solderable per mil-std-750, method 2026. -polarity: color band denotes cathode end. -approx. weight: 0.063 grams csf a101-g thru. csf a105-g maximum ratings and electrical characteristics d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) d o - 2 1 4 a c ( s m a ) qw -bs001 csf a101-g 2 no tes : 1. th erm al r esi sta nce fro m jun ctio n t o le ad mo unt ed on p .c. b. wit h 8 .0 8.0 m m cop per pa d a rea . comchip t echnology co., l td. 0.1 10(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) 0.209(5.31) 0.185(4.70) 0.012(0.31) 0.006(0.15) 0.008(0.20) 0.004(0.10) 0.059(1.50) 0.035(0.89) 0.091(2.31) 0.067(1.70) 0.180(4.57) 0.160(4.06) max. repetitive peak reverse voltage max. dc blocking voltage max. rms voltage peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (jedec method) max. average forward current max. instantaneous forward voltage @1.0a reverse recovery time max. dc reverse current at t a =25c rated dc blocking voltage t a =100c max. thermal resistance (note 1) max. operating junction temperature storage temperature csf a102-g csf a103-g csf a104-g csf a105-g units symbol parameter v rrm v dc v rms i fsm i o v f t rr i r r jl t j t stg 50 50 35 100 100 70 0.95 200 200 140 30 1.0 35 5.0 100 35 150 -55 to +150 400 400 280 1.25 600 600 420 1.5 v v v a a v ns a o c/w o c o c
qw -bs001 ra ting and characteristic cur ves (csf a101-g thru csf a105-g) percent of rated peak reverse v oltage (%) 140 120 80 60 20 0 fig.1 reverse characteristics 0.1 1 10 100 1000 r e v e r s e c u r r e n t , ( a ) forward v oltage (v) 0 fig.2 forward characteristics 0.001 0.01 0.1 1 10 0.6 reverse v oltage (v) 0.1 fig.3 junction capacitance 0 2 6 12 14 1 10 100 number of cycles at 60hz fig.4 non-repetitive forward surge current 0 15 20 30 comchip t echnology co., l td. page 2 rev :a 0.4 0.8 1.4 1.2 4 8 10 1 10 100 5 25 fig.5 t est circuit diagram and reverse recovery t ime characteristics 50 noninductive 10 noninductive (+) 25vdc (approx.) (-) d.u.t . 1 non- inductive oscillliscope (note 1) pulse genera tor (note 2) (+) (-) notes: 1. rise time=7ns max., input impedance=1 m , 22pf . 2. rise time=10ns max., input impedance=50 . trr set time base for 50 / 10ns / cm 1cm -1.0a -0.25a 0 +0.5a fig.6 current derating curve ambient t emperature (c) a v e r a g e f o r w a r d c u r r e n t , ( a ) 0 50 25 75 100 150 125 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 single phase half wave 60hz s m d s u p e r f a s t r e c o v e r y r e c t i f i e r s 40 100 o t j =125 c o t j =75 c o t j =25 c csf a101-g~103-g csf a104-g csf a105-g o t j =25 c pulse width 300 s 4% duty cycle 0.2 1.0 o t j =25 c f=1mhz vsig=50mvp-p 10 o t j =25 c 8.3ms single half sine wave, jedec method j u n c t i o n c a p a c i t a n c e , ( p f ) p e a k f o r w a r d s u r g e c u r r e n t , ( a ) f o r w a r d c u r r e n t , ( a )
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